Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method |
| T. Pustelny Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland |
| Received: January 3, 1995; revised version: May 10, 1995; in final form: August 16, 1995 |
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| A method of surface potential determination in semiconductors by means of the transverse acoustoelectric effect is described. The results of theoretical analysis of the transverse acoustoelectric voltage versus surface potential and different surface electrical parameters in indium phosphate single crystals are presented. The experimental results of the surface potential investigations have been obtained after various surface treatments in InP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to different surface treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained by the acoustics method were of the range -0.08 [V] to -0.22 [V]. |
| DOI: 10.12693/APhysPolA.88.1123 PACS numbers: 73.20.-r, 72.50.+b, 43.35.+d |