GaN Layers Grown by Reactive Ion Plating |
| A. Żubka, R. Dwiliński, B. Suchanek, W. Janik, A. Wysmołek, S. Kwiatkowski, M. Kamińska Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland and L. Shaginyan Institute of Material Problems, Krzyżanowskowo 3, 252142 Kiev, Ukraine |
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| GaN layers grown on ceramics, sapphire or SiC substrates using reactive ion plating method are presented. In reactive ion plating method gallium from a hot source reacts on a heated substrate with nitrogen partially ionized. Rutherford backscattering technique was applied to check the composition of the samples and gallium to nitrogen ratio was found to be close to one. However, Rutherford backscattering studies showed also a remarkable amount of unintentional impurities present in the layers. The structure of GaN was determined using reflection high-energy electron diffraction. It appeared that polycrystal and monocrystal can be grown, depending on growth conditions. Absorption spectra taken on the layers grown on sapphire showed a tail of band to band absorption starting at about 370 nm. Carrier concentration was of the order of 1019-1020 cm-3 at room temperature and did not change much with temperature decrease. No luminescence from the layers was detected, most probably due to high concentration of impurities. |
| DOI: 10.12693/APhysPolA.88.1058 PACS numbers: 68.55.Gi, 81.15.Jj |