Plasma Edge Modification in Strongly Compensated Semiconductors |
| W. Szuszkiewicz, K. Dybko Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland W. Bardyszewski Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland and C. Julien Laboratoire de Physique des Solides, Université Pierre et Marie Curie, 4, pl. Jussieu, 75252 Paris, Cedex 05, France |
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| We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg1-xCoxSe for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures. |
| DOI: 10.12693/APhysPolA.88.1048 PACS numbers: 71.45.Gm, 78.30.Fs, 72.30.+q |