Contactless Electroreflectance Study of Temperature Dependence of Fundamental Band Gap of ZnSe |
| W. Krystek, L. Malikova, F.H. Pollak Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, NY 11210 USA M.C. Tamargo, N. Dai, L. Zeng and A. Cavus Chemistry Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, City College of the City University of New York, New York, NY 10031 USA |
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| We report a systematic study of the temperature variation of the energy [E0(T)] and broadening parameter [Γ0(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E0(T) and Γ0(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E0(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers. |
| DOI: 10.12693/APhysPolA.88.1013 PACS numbers: 78.20.-e, 78.20.Wc, 78.40.Fy |