Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures |
| M. Godlewski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland B. Monemar Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden T.G. Anderson Dept. of Physics, Chalmers Univ. of Technol., Göteborg, Sweden I. Tsimperidis, T. Gregorkiewicz, C.A.J. Ammerlaan Van der Waals-Zeeman Lab., Univ. of Amsterdam, Amsterdam, The Netherlands J. Muszalski and M. Kaniewska Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied. |
| DOI: 10.12693/APhysPolA.88.990 PACS numbers: 78.66.Fd, 73.40.Kp, 73.20.Dx, 71.25.Jd |