Lattice Constant of Doped Semiconductor |
| M. Leszczyński, E. Litwin-Staszewska, T. Suski High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland J. Bąk-Misiuk and J. Domagała Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si. |
| DOI: 10.12693/APhysPolA.88.837 PACS numbers: 61.72.Vv, 65.70.+y |