GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
R. Bożek, A. Babiński, J.M. Baranowski, R. Stępniewski
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Z. Klusek, W. Olejniczak
Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland

K. Starowieyski
Department of Chemistry, Technical University of Warsaw, Koszykowa 75, 00-662 Warszawa, Poland

and J. Wróbel
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
DOI: 10.12693/APhysPolA.88.974
PACS numbers: 68.55.-a, 81.15.Gh