Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers |
| Z.R. Zytkiewicz and D. Dobosz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers. |
| DOI: 10.12693/APhysPolA.88.965 PACS numbers: 68.55.Df, 81.10.Dn |