Compensation Models in Chlorine Doped CdTe Based on Positron Annihilation and Photoluminescence Spectroscopy |
| W. Stadler, D.M. Hofmann, B.K. Meyer Technische Universität München, Physik Department, E16, 85747 Garching, Germany R. Krause-Rehberg, A. Polity, Th. Abgarjan Martin-Luther-Universität Halle-Wittenberg, FB Physik, 06108 Halle, Germany M. Salk, K.W. Benz Kristallographisches Institut, Universität Freiburg, 79104 Freiburg, Germany and M. Azoulay Soreq, Nuclear Research Centre, Yavne 70600, Israel |
| Full Text PDF |
| In this investigation positron annihilation, photoluminescence and electron paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explained by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electron paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy. |
| DOI: 10.12693/APhysPolA.88.921 PACS numbers: 78.70.Bj, 71.55.Gs, 78.55.Et |