Metastability of Localized Neutral Donor State In GaAs
C. Skierbiszewski, W. Jantsch, K. Lübke
Johannes-Kepler-Universität, 4040 Linz, Austria

Z. Wilamowski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and T. Suski
Unipress, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
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Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
DOI: 10.12693/APhysPolA.88.905
PACS numbers: 71.55.-i, 72.20.Fr