Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si |
| F. Riesz, Vo Van Tuven Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary and J. Varrio Department of Physics, Tampere University of Technology, P.O. Box 692, 33101 Tampere, Finland |
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| Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power law with an exponent close to -1. |
| DOI: 10.12693/APhysPolA.88.889 PACS numbers: 73.50.Pz, 73.40.Sx, 85.60.Gz |