Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP |
| J. Przybytek, M. Baj, T. Słupiński Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland |
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| Our results of optical absorption, electronic transport and deep level transient spectroscopy measurements performed on n-type GaAs1-xPx (x ≈ 0.2) strongly suggest that using both an enlarged-gap material (compared to GaAs) and hydrostatic pressure we can push down the acceptor level of the distorted configuration of the EL2 defect, (EL2*)–/0, sufficiently low into the gap that the distorted configuration of the EL2 defect, EL2*, becomes stabilized. |
| DOI: 10.12693/APhysPolA.88.881 PACS numbers: 71.55.Eq |