Optically Active Centers in Er-Implanted Silicon |
| H. Przybylińska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland W. Jantsch, G. Hendorfer, L. Palmetshofer Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria R.J. Wilson and B.J. Sealy Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK |
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| We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit. |
| DOI: 10.12693/APhysPolA.88.877 PACS numbers: 78.55.Hx |