Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells |
| A. Prinz, G. Stőger, G. Brunthaler, G. Bauer Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria K. Ismail and B.S. Meyerson IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA |
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| A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time τϕ is extracted to follow a (aT + bT2 )-1 dependence. The evaluated prefactor α = 0.25 is below the theoretical limit of 0.5, but agrees with observations in Si and GaAs/AlGaAs heterostructures. |
| DOI: 10.12693/APhysPolA.88.873 PACS numbers: 73.20.Fz |