Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals |
| K. Pakula, J.M. Baranowski, R. Stępniewski, A. Wysmołek Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland I. Grzegory, J. Jun, S. Porowski High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland M. Sawicki Institute of Physics, Polish Academy of Sciences Al. Lotników 32/46, 02-668 Warszawa, Poland and K. Starowieyski Chemistry Department, Warsaw Technical University, Koszykowa 75, 00-662 Warszawa, Poland |
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| The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented. |
| DOI: 10.12693/APhysPolA.88.861 PACS numbers: 78.55.Cr, 78.66.Fd |