Photoluminescence Study of GaN
X. Zhang, P. Kung, A. Saxler, D. Walker, Τ. Wang and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
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Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al2O3 (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant­-related emissions from doped samples were observed. Deep-level yellow emis­sion centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
DOI: 10.12693/APhysPolA.88.601
PACS numbers: 71.55.Eq, 68.55.-a, 78.66.-w