Non-Ohmic Conductivity of High Resistivity CdTe
J. Łusakowski, J. Szczytkowski, K. Szadkowski
Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland

E. Kamińska, A. Piotrowska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

G. Karczewski and T. Wojtowicz
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown lay­ers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the cur­rent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
DOI: 10.12693/APhysPolA.88.803
PACS numbers: 72.80.-r