Lattice Parameter Relaxation during MBE of ZnTe/Cd1-xZnxTe/Cd0.5Zn0.5Te Buffer Layers by RHLED and HRTEM
S. Kreta,b, G. Karczewskia, A. Zakrzewskia, P. Dłużewskia, A. Dubonb, T. Wojtowicza, J. Kossuta, C. Delamarreb and J.Y. Lavalb
aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
bLaboratoire de Physique du Solide, CNRS-ESPCI, Rue Vauquelin,7523l Paris, France
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The dynamics of the lattice relaxation processes were investigated us­ing a reflection of a high energy electron diffraction analysis system dur­ing growth by molecular beam epitaxy of ZnTe/Cd1-xΖnxTe/Cd0.5Mn0.5Te buffers on GaAs substrates. The variation of the lattice parameter recorded by the high energy electron diffraction during the growth was later confirmed by an analysis of high resolution transmission electron microscopy images. We report also on an observation of oscillations of the lattice parameter during the deposition of several first layers of ZnTe on CdTe.
DOI: 10.12693/APhysPolA.88.795
PACS numbers: 61.14.Hg, 61.16.Bg, 68.35.-p