Crystallization in InGaAs/InP Heterostructures with a Strong Disorder
Gy. Kovácsa, G. Remenyib, G. Gombosc, I.G. Savel'evd, A.M. Kreshchukd, N. Hegmane and B. Pödörc
aDepartment of Low Temperature Physics, Roland Eötvös University, Puskin u. 5-7, 1088 Budapest, Hungary
bCNRS Centre de Recherches sur les très Basses Températures, 38042 Grenoble, France
cResearch Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary
dA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
eInstitute of Nuclear Research of the Hungarian Academy of Sciences, Ρ.O.Βox 51, 4001 Debrecen, Hungary
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Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.
DOI: 10.12693/APhysPolA.88.783
PACS numbers: 73.20.Dx