Piezoelectric Effect in Strained CdTe-Based Heterostructures
J. Cibert, R. Andre and Le Si Dang
Laboratoire de Sρectrométrie Physique, CNRS et Université J. Fourier-Grenoble, BP87, 38402 St Martin d'Hères, Cedex, France
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Strained III-V or II-VI heterostructures grown along a polar axis in­corporate a piezoelectric field which strongly alters their electronic prop­erties. We review some experimental studies of this built-in field, and its consequences, in CdTe-CdMnTe and CdTe-CdZnTe heterostructures. This includes: (i) the measure of the built-in field, with as an example the depen­dence of the piezoelectric coefficient on bond length; (ii) the description of the exciton formed by an electron and a hole which can be continuously sep­arated in space by the piezoelectric field; (iii) some examples of the extreme sensitivity to any additional electric field.
DOI: 10.12693/APhysPolA.88.591
PACS numbers: 77.65.Bn, 78.20.Ηp, 78.66.Ηf