Identification of Residual Impurities in Si-Doped MBE Grown GaAs
M. Kaniewska, K. Regiński, J. Kaniewski, J. Muszalski, L. Ornoch, J. Adamczewska, J. Marczewski, M. Bugajski
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

and E. Mizera
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The changes of dopant vaporization enthalpy in GaAs:Si grown by mole­cular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
DOI: 10.12693/APhysPolA.88.775
PACS numbers: 73.40.Νs, 71.55.Eq, 73.20.Hb