Interfacial Reactions between Thin Films of Zinc and (100)InP
E. Kamińska, A. Piotrowska, A. Barcz
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

E. Mizera and E. Dynowska
Institute of Physics, Polish Academy of Sciences Al. Lotników 32/46, 02-668 Warszawa, Poland
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The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and trans­mission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn3P2 phase lattice matched to InP.
DOI: 10.12693/APhysPolA.88.771
PACS numbers: 73.40.Ns