New Local Vibrational Modes Related to Silicon in Bulk AlGaAs
P. Kaczor, Z.R. Żytkiewicz and L. Dobaczewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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A silicon-related local vibrational mode absorption in AlGaAs is re­ported for the first time. It consists of six peaks grouped around 450 cm-1 which form a distinct pattern. We believe that the new local vibrational mode absorption is a fingerprint of a single defect. Among the discussed mi­croscopic structures the most plausible is a SiGa-SiAs pair complex with SiAs acceptor interacting with different Ga, Al nearest neighbour local environ­ments.
DOI: 10.12693/APhysPolA.88.759
PACS numbers: 61.72.Vv, 63.20.Pw, 71.55.Eq