Influence of Accumulation Layer on Rcsonant Tunneling in Double-Barrier Structures
E. Kaczmarek
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The existing theory of the resonant tunneling phenomena in double-bar­rier structures takes into account the energy quantization in the well confined between the barriers only. In real tunneling structures there is another well, i.e., the accumulation well in the spacer region separating the highly doped region and the double-barrier structure. In the present paper the transmis­sion coefficient for double-barrier structures with an accumulation layer as a function of applied voltage has been derived. The experimentally observed oscillations of the tunneling current can be explained by the obtained quan­tization of the energy spectrum in the accumulation well.
DOI: 10.12693/APhysPolA.88.755
PACS numbers: 73.40.Gk