Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures
K. Jezierski, P. Sitarek, J. Misiewicz
Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

M. Panek, B. Ściana, R. Korbutowicz and M. Tłaczała
Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland
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Photoreflectance spectra were measured at room temperature for ener­gies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the ex­istence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and in­terface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
DOI: 10.12693/APhysPolA.88.751
PACS numbers: 68.55.-a, 71.35.+z