Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
J. Jasińskia, A. Kurpiewskia, K. Korοnaa, M. Kamińskaa, M. Ρalczewskab, A. Krotkusc, S. Marcinkieviciusc, Z. Liliental-Weberd, H.H. Tane and C. Jagadishe
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa
cSemiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
dLawrence-Berkeley Laboratory, 1st Cyclotron Road, Berkeley, CA 94720, USA
eDepartment of Electronic Materials and Engineering, Australian National University Canberra, Australia
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Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These proper­ties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (AsGa) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
DOI: 10.12693/APhysPolA.88.747
PACS numbers: 73.90.+f, 78.30.Er