Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

J.P. Bergman, P.O. Holtz, B. Monemar
Dept. of Physics and Measurement Technol., Linköping University, Sweden

M. Bugajski, K. Regiński and M. Kaniewska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown with­out growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth in­terrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized exci­tons are observed in that case.
DOI: 10.12693/APhysPolA.88.719
PACS numbers: 71.35.+z, 73.20.Fz, 78.55.Cr