Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs |
| M. Godlewski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland J.P. Bergman, P.O. Holtz, B. Monemar Dept. of Physics and Measurement Technol., Linköping University, Sweden M. Bugajski, K. Regiński and M. Kaniewska Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case. |
| DOI: 10.12693/APhysPolA.88.719 PACS numbers: 71.35.+z, 73.20.Fz, 78.55.Cr |