Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling
T. Figielski, T. Wosiński, A. Mąkοsa
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

M. Kaniewska and K. Regiński
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
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A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnel­ling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.
DOI: 10.12693/APhysPolA.88.707
PACS numbers: 73.40.Gk, 85.30.Mn