Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy
L. Dobaczewskia, P. Kamińskib, R. Kozłowskib and M. Surmaa
aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
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High-resolution Laplace-transform deep level transient spectroscopy tech­nique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
DOI: 10.12693/APhysPolA.88.703
PACS numbers: 68.55.Ln, 71.55.Cn, 73.40.Lq