Electron Localization in Sb-Doped Si/SiGe Superlattices
T. Dietl, J. Jaroszyński, M. Sawicki, P. Głód, J. Wróbel
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

G. Stöger, G. Brunthaler, G. Bauer
Institut fur Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria

and F. Schäffler
Daimler-Benz Research Center, 89081 Ulm, Germany
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Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D/D ≈ 103 the system behaves as 3D in respect of localization by disorder.
DOI: 10.12693/APhysPolA.88.699
PACS numbers: 73.20.Fz, 72.15.Rn, 73.61.Cw