SiGe: A Promise into Reality?
H.G. Grimmeiss, J. Olajos and J. Engval
Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden
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The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistors as an example. First results obtained with very fast and low-noise heterobipolar transistors are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/Si1-xGex strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties.
DOI: 10.12693/APhysPolA.88.567
PACS numbers: 71.55.Cn