MOCVD Growth of InP-Related Materials Using TEA and TBP |
| M. Czub and W. Strupiński Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland |
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| High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, InGaAlP have been grown by low-pressure metalorganic chemical vapor deposition using TMIn, TMGa, TMAl and the less hazardous group V precursors, ΤΒA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570-650°C and 520-650°C, respectively. The V/III ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with ΤΒA) was 72360 cm2/(V s) for n = 1.5 × 1015/cm-3 and a thickness of 2 μm. Comparable photoluminescence parameters of InGaP between layers grown with TBP and PH3 were achieved, but for InGaAlP (TBP) photoluminescence intensity was significantly lower than for InGaAlP (PH3). The promising results allow one to apply of ΤΒA and TBP for developing of device structures. |
| DOI: 10.12693/APhysPolA.88.695 PACS numbers: 68.55.Ce |