MOCVD Growth of InP-Related Materials Using TEA and TBP
M. Czub and W. Strupiński
Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
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High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, In­GaAlP have been grown by low-pressure metalorganic chemical vapor depo­sition using TMIn, TMGa, TMAl and the less hazardous group V precursors, ΤΒA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570-650°C and 520-650°C, respectively. The V/III ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with ΤΒA) was 72360 cm2/(V s) for n = 1.5 × 1015/cm-3 and a thickness of 2 μm. Comparable photolumines­cence parameters of InGaP between layers grown with TBP and PH3 were achieved, but for InGaAlP (TBP) photoluminescence intensity was signifi­cantly lower than for InGaAlP (PH3). The promising results allow one to apply of ΤΒA and TBP for developing of device structures.
DOI: 10.12693/APhysPolA.88.695
PACS numbers: 68.55.Ce