Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices |
A.E. Belyaev, S.A. Vitusevich, B.A. Glavin Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine A. Mąkosa and W. Dobrowolski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers. |
DOI: 10.12693/APhysPolA.88.675 PACS numbers: 73.40.Gk, 85.30.Mn |