Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices
A.E. Belyaev, S.A. Vitusevich, B.A. Glavin
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

A. Mąkosa and W. Dobrowolski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers.
DOI: 10.12693/APhysPolA.88.675
PACS numbers: 73.40.Gk, 85.30.Mn