Anion-Cation Site Dependence of Pressure Coefficients for Donors in GaAs |
| S. Bednarek and J. Adamowski Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland |
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| The theoretical model, based on the many-band approach, is proposed for the strongly localized donor states in GaAs. The pressure coefficients for the states of A1 and Τ-2 symmetry have been calculated for the donors at the anion and cation sites. The obtained results show that these pressure coefficients are different from the conduction-band pressure coefficients and are dependent on the lattice site occupied by the impurity as well as on the symmetry of the donor states. |
| DOI: 10.12693/APhysPolA.88.671 PACS numbers: 71.55.-i |