Anion-Cation Site Dependence of Pressure Coefficients for Donors in GaAs
S. Bednarek and J. Adamowski
Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland
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The theoretical model, based on the many-band approach, is proposed for the strongly localized donor states in GaAs. The pressure coefficients for the states of A1 and Τ-2 symmetry have been calculated for the donors at the anion and cation sites. The obtained results show that these pressure coefficients are different from the conduction-band pressure coefficients and are dependent on the lattice site occupied by the impurity as well as on the symmetry of the donor states.
DOI: 10.12693/APhysPolA.88.671
PACS numbers: 71.55.-i