Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions
B. Adamowicz
Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland

C. Ottaviani, C. Quaresima and P. Perfetti
Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy
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We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.
DOI: 10.12693/APhysPolA.88.663
PACS numbers: 73.20.-r, 73.20.At