State of the Art Molecular Beam Epitaxy of III-V Compounds
C.T. Foxon
Department of Physics, University of Nottingham, Nottingham NG7 2RD, England and also Department of Physics, Technical University of Eindhoven, The Netherlands
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This paper discusses molecular beam epitaxy with particular empha­sis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.
DOI: 10.12693/APhysPolA.88.559
PACS numbers: 61.50.Cj, 68.55.Bd, 72.20.-i, 85.60.-q