Temperature Dependence of Properties of Heterojunctions of Some TCNQ Salts in Polymer Matrices with p- or n-Doped Silicon |
| J.K. Jeszkaa, A. Tracza, G. Boiteuxb, G. Seytreb and M. Kryszewskia aCentre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, 90-363 Łódź, Poland bLEMPB, Universite Lyon I, CNRS UA 507, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne, France |
| Received: April 19, 1995; in final form: June 8, 1995 |
| Dedicated to Professors Krzyszof Pigoń, Józef W. Rohleder and Zdzisław Ruziewicz on the occasion of their 70th birthdays |
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| The temperature dependence of the electrical properties of heterojunctions with silicon formed by conductive organic polymer composites with networks of two complex tetracyanoquinodimethane salts (of N-n-butyl-isoquinolinium and of diethyl methyl sulphonium cations) were studied. We show that it is possible to prepare junctions with quite good rectifying properties, comparable to those obtained using other organic semiconductors. The observed forward-bias current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Reverse bias and C-V characteristics show that the transport mechanism, especially in the case of p-Si junctions is more complicated and probably tunnelling between localized levels plays an important role. |
| DOI: 10.12693/APhysPolA.88.533 PACS numbers: 72.80.Le, 73.40.Lq |