Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction |
| A.A. Popov, A.N. Imenkov, N.M. Kolchanova, Yu.P. Yakovlev A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia and T.T. Piotrowski Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the electroluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface. |
| DOI: 10.12693/APhysPolA.87.559 PACS numbers: 72.20.Nz |