Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction
A.A. Popov, A.N. Imenkov, N.M. Kolchanova, Yu.P. Yakovlev
A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia

and T.T. Piotrowski
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the elec­troluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.
DOI: 10.12693/APhysPolA.87.559
PACS numbers: 72.20.Nz