Preparation and Luminescent Properties of ZnTe-Cd1-xMnxTe1-ySey Heterojunction
Le Van Khoi, W. Dobrowolski, B. Witkowska, A. Mycielski, R.R. Galązka
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and Nguyen The Khoi
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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ZnTe-Cd1-xMnxTe1-ySey heterojunctions were prepared by vapor-transport epitaxy of ZnTe on In-doped Cd1-xMnxTe1-ySey (x = 0.05, y = 0.03) single crystalline substrate in vacuum. At temperatures lower than 120 K the infrared and red electroluminescence were observed from the ZnTe-Cd1-xMnxTe1-ySey diode with forward current density in the range 0.003-4.0 A/cm2.
DOI: 10.12693/APhysPolA.87.325
PACS numbers: 78.60.Fi