Defect Levels in Gallium Arsenide after Irradiation with Light Ions
T. Schmidt, L. Palmetshofer
Abteilung Festkörperphysik, Johannes-Kepler-Universität Linz, 4045 Linz, Austria

and K. Lübke
Institut fur Mikroelektronik, Johannes-Kepler-Universität, 4045 Linz, Austria
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Deep level centers in GaAs implanted with light ions (H+, He+) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling di­rectly after the implantation process and after annealing at various tempera­tures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps effi­ciently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.
DOI: 10.12693/APhysPolA.87.543
PACS numbers: 68.55.Ln