Electrical and Optical Properties of Highly Non-stoichiometric GaAs
A. Kurpiewski, K. Korona, M. Kamińska
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

M. Palczewska
Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

C. Jagadish and J. Williams
Department of Electronic Materials and Engineering, Australian National University, Canberra, Australia
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The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorp­tion coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
DOI: 10.12693/APhysPolA.87.518
PACS numbers: 73.90.+f, 78.30.Er