Nature of Donors in SiC
B. Suchanek, R. Dwiliński, M. Kamińska
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

M. Palczewska
Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

and S. Vlaskina
Institute of Semiconductors Physics, Ukrainian Academy of Sciences, Prospekt Nauki 28, 252065 Kiev, Ukraine
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6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.
DOI: 10.12693/APhysPolA.87.321
PACS numbers: 76.30.Da