Temperature Study of Photoluminescence from Deep CdTe/Cd1-xMnxTe Quantum Wells
M. Kutrowski, T. Wojtowicz, G. Karczewski, K. Kopalko, A.K. Zakrzewski, E. Janik, K. Grasza, E. Łusakowska and J. Kossut
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The photoluminescence studies in CdTe/CdMnTe quantum wells are reported in the temperature range 10-300 K. The MnTe concentration in the barriers is x = 0.3, 0.5, 0.63 and 0.68. Thus the potential wells in our samples are very deep, of the order of ≈ 800 meV in the conduction band and ≈ 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (related to high x value) between the wells and the barriers the observed line widths are as narrow as 2 meV in the case of 100 Å. Clear manifestations of internal strain are observed. In particular, the temperature coefficient of the luminescence energies shows strong dependence on the width of wells.
DOI: 10.12693/APhysPolA.87.500
PACS numbers: 73.20.Dx, 78.55.Et