Doping of the Wide-Gap Semiconductor Cd1-xMgxTe During Molecular Beam Epitaxy
F. Fischer, Th. Litz, A. Waag, H. Heinke, S. Scholl, J. Gerschütz and G. Landwehr
Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
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We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are con­sidered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.
DOI: 10.12693/APhysPolA.87.487
PACS numbers: 68.55.Bd