Pressure Induced Shallow-Deep A1 Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment
J.E. Dmochowski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

R.A. Stradling
Blackett Laboratory and Interdisciplinary Research Centre for Semiconductors, Imperial College of Science, Technology and Medicine, Prince Consort Road, Łondon SW7 2BZ, U.K.

J. Sly, D.J. Dunstan, A.D. Prins and A.R. Adams
Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.
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Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A1 transition for Sn donors in highly Sn doped n-type (≈ 1018 cm-3) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.
DOI: 10.12693/APhysPolA.87.457
PACS numbers: 71.55.Eq