Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon |
| W. Bala, G. Głowacki, Z. Łukasiak Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland M. Drozdowski, M. Kozielski Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland E. Nossarzewska-Orłowska and A. Brzozowski Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland |
| Full Text PDF |
| Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p+ silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions. |
| DOI: 10.12693/APhysPolA.87.445 PACS numbers: 78.30.Hv, 78.66.-w |