Competition of Radiation Processes in 6H-SiC Observed by Luminescence
A. Wysmołeka, P. Mrozińskia, R. Dwilińskia, S. Vlaskinab and M. Kamińskaa
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
bInstitute of Semiconductors Physics, Ukrainian Academy of Sciences, Prospekt Nauki 28, 252065 Kiev, Ukraine
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We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The mea­surements performed at a broad range of temperatures showed totally dif­ferent behaviour of photoluminescence intensity of both bands. The pre­sented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the con­duction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ioniza­tion of subsequent shallow donor levels.
DOI: 10.12693/APhysPolA.87.437
PACS numbers: 78.55.-m, 78.60.Kn