Weak Antilocalization in Quantum Wells
W. Knap, C. Skierbiszewski, E. Litwin-Staszewska, F. Kobbi, A. Zduniak, J.L. Robert
Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

G.E. Pikus
A.F. Ioffe Physicotechnical Institute, Russian Academy Of Sciences, St Petersbourg, Russia

S.V. Iordanskii
Landau Institute for Theoretical Physics, 117940 Moscow, Russia

V. Mosser
Schlumberger Montrouge Recherche 50, Avenue Jean Jaurés, B.P. 620-05, 92542 Montrouge, France

and K. Zekentes
Forth Institute of Electronic Structure and Laser, P.O. Box 1527, Heraklion, 71110 - Crete, Greece
Full Text PDF
Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak an­tilocalization corrections to the conductivity in GaInAs quantum wells. Con­sistent quantitative (up to order of magnitude) description of weak antilocal­ization data on GaAs like heterojunctions and quantum wells was obtained. Our results show that spin precession around the effective magnetic field direction as described by the Dyakonov-Perel model is the main spin relax­ation mechanism in degenerated 2D electron gas in semiconductors with no inversion symmetry.
DOI: 10.12693/APhysPolA.87.427
PACS numbers: 72.15.Lh, 73.20.Fz, 72.15.Rn