Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts
A. Piotrowska, E. Kamińska, T. Piotrowski, S. Kasjaniuk, M. Guziewicz
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

S. Gierlotka
Unipress, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

X.W. Lin, Z. Liliental-Weber, J. Washburn
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA

and S. Kwiatkowski
A. Soltan Institute For Nuclear Studies, Hoża 69, 00-681 Warszawa, Poland
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Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decom­poses was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metalliza­tion is not a good candidate for device quality ohmic contacts to GaSb-based devices.
DOI: 10.12693/APhysPolA.87.419
PACS numbers: 73.40.Ns