Density of Gap States Deconvoluted from Photoconductive Spectra for Undoped Amorphous Silicon and Silicon-Carbon Thin Films |
| T. Pisarkiewicz, T. Stapiński Department of Electronics, Academy of Mining and Metallurgy, Kraków, Poland G. Adriaenssens, W. Lauwerens Department of Solid State and High Pressure Physics, Katholieke Universiteit Leuven, Leuven - Heverlee, Belgium and P. Rava Elettrorava S.p.A., Savonera Torino, Italy |
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| Density of states in amorphous hydrogenated silicon and silicon-carbon thin films were calculated by deconvolution of the optical absorption coefficient a! measured by constant photocurrent method. Addition of carbon to silicon lattice increases the optical band-gap and influences the distribution of defect states in the gap. |
| DOI: 10.12693/APhysPolA.87.407 PACS numbers: 73.20.Dx |