Density of Gap States Deconvoluted from Photoconductive Spectra for Undoped Amorphous Silicon and Silicon-Carbon Thin Films
T. Pisarkiewicz, T. Stapiński
Department of Electronics, Academy of Mining and Metallurgy, Kraków, Poland

G. Adriaenssens, W. Lauwerens
Department of Solid State and High Pressure Physics, Katholieke Universiteit Leuven, Leuven - Heverlee, Belgium

and P. Rava
Elettrorava S.p.A., Savonera Torino, Italy
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Density of states in amorphous hydrogenated silicon and silicon-carbon thin films were calculated by deconvolution of the optical absorption coeffi­cient a! measured by constant photocurrent method. Addition of carbon to silicon lattice increases the optical band-gap and influences the distribution of defect states in the gap.
DOI: 10.12693/APhysPolA.87.407
PACS numbers: 73.20.Dx